Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure

Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors

Characterization of Tunnel Oxide Degradation under NAND-type Program/Erase Stresses of SONOS Flash Memory Cell Transistors with W×L=30 nm×30 nm Channel

Tunnel oxide degradation under the program/erase stress by the Fowler-Nordheim tunneling of NAND-type SONOS flash memory cell transistors (W×L=30×30 nm) fabricated on a fully depleted SOI substrate was investigated. The variation in the interface traps and oxide traps in the bottom oxide was analyzed. The result shows that the degradation of the threshold voltage window between the program and ...

effect of sub-grid scales on large eddy simulation of particle deposition in a turbulent channel flow

چکیده ندارد.

the effects of changing roughness on the flow structure in the bends

flow in natural river bends is a complex and turbulent phenomenon which affects the scour and sedimentations and causes an irregular bed topography on the bed. for the reason, the flow hydralics and the parameters which affect the flow to be studied and understand. in this study the effect of bed and wall roughness using the software fluent discussed in a sharp 90-degree flume bend with 40.3cm ...

Numerical Solution of Natural Convection in a Vertical Channel.

Natural convection between vertical parallel plates occurs frequently in applications such as solar collectors and cooling of electronic instruments. The problem is a two dimensional developing buoyant flow. In this work, the two dimensional conservation equations are solved numerically for constant wall temperature and constant wall heat flux. The results for the local Nusselt number at the du...